Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM

An analytic model for the endurance degradation of metal oxide based RRAM is presented for the first time. The endurance degradation behaviors under various operation modes can be predicted by the model, which were verified by the measured data in different devices. Furthermore, the 10 6 endurance f...

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Bibliographic Details
Main Authors: Huang, P., Chen, B., Wang, Y. J., Zhang, F. F., Shen, L., Liu, R., Zeng, L., Du, G., Zhang, X., Gao, B., Kang, J. F., Liu, X. Y., Wang, X. P., Weng, B. B., Tang, Y. Z., Lo, G.-Q, Kwong, D.-L
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Degradation
Devices
Durability
Endurance
Integrated circuit modeling
Mathematical analysis
Mathematical models
Metal oxides
Optimization
Predictive models
Resistance
Switches
Tin
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Summary:An analytic model for the endurance degradation of metal oxide based RRAM is presented for the first time. The endurance degradation behaviors under various operation modes can be predicted by the model, which were verified by the measured data in different devices. Furthermore, the 10 6 endurance for all 4-level resistance states in HfO X -based RRAM is demonstrated by using the proposed optimization operation scheme for multi-level data storage based on the model prediction. Guided by the model, a dynamic self-recovery operation scheme is developed to achieve more than 2 orders endurance enhancement at a high switching speed (10 ns).
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2013.6724685