Self-heating effects in ultra-scaled Si nanowire transistors

In this paper, an atomistic quantum transport simulator coupling electron and phonon transport is used to investigate the influence of self-heating on the performance of ultra-scaled gate-all-around Si nanowire field-effect transistors. By driving not only the electron, but also the phonon populatio...

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Bibliographic Details
Main Authors: Rhyner, Reto, Luisier, Mathieu
Format: Conference Proceeding
Language:English
Subjects:
Devices
Heating
Logic gates
Nanowires
Phonons
Scattering
Semiconductor devices
Silicon
Simulation
Sociology
Statistics
Transistors
Transport
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Summary:In this paper, an atomistic quantum transport simulator coupling electron and phonon transport is used to investigate the influence of self-heating on the performance of ultra-scaled gate-all-around Si nanowire field-effect transistors. By driving not only the electron, but also the phonon population out-of-equilibrium, the developed simulation approach ensures that both current and energy conservation are satisfied, thus giving rise to local variations of the lattice temperature. As a consequence of the increased electron-phonon interactions, it is found that the considered nano-devices operate at about 50% of their ballistic limit, even with a gate length as short as 5 nm. Furthermore, the formation of hot spots close to the drain contact of the transistors is clearly visible with a maximum effective temperature of almost 500 K.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2013.6724734