Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p super(++) collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize high channel mobility. We were able to achi...

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Bibliographic Details
Published in:Technical digest - International Electron Devices Meeting 2013-12, p.6.6.1-6.6.4
Main Authors: Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu
Format: Article
Language:English
Subjects:
Carbon
Channels
Electric potential
Epitaxy
Implantation
Silicon carbide
Threshold voltage
Voltage
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Summary:Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p super(++) collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize high channel mobility. We were able to achieve an ultrahigh blocking voltage of more than 16 kV, extremely low forward voltage drop of 5 V at 100 A/cm super(2) and small threshold voltage shift (< 0.1 V). These characteristics are useful for Smart Grid and HVDC systems, the use of which would realize a low carbon emission society.
ISSN:2156-017X
DOI:10.1109/IEDM.2013.6724576