Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p super(++) collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize high channel mobility. We were able to achi...

Full description

Saved in:
Bibliographic Details
Published in:Technical digest - International Electron Devices Meeting 2013-12, p.6.6.1-6.6.4
Main Authors: Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu
Format: Article
Language:English
Subjects:
Carbon
Channels
Electric potential
Epitaxy
Implantation
Silicon carbide
Threshold voltage
Voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 6.6.4
container_issue
container_start_page 6.6.1
container_title Technical digest - International Electron Devices Meeting
container_volume
creator Yonezawa, Yoshiyuki
Mizushima, Tomonori
Takenaka, Kensuke
Fujisawa, Hiroyuki
Kato, Tomohisa
Harada, Shinsuke
Tanaka, Yasunori
Okamoto, Mitsuo
Sometani, Mitsuru
Okamoto, Dai
Kumagai, Naoki
Matsunaga, Shinichiro
Deguchi, Tadayoshi
Arai, Manabu
Hatakeyama, Tetsuo
Makifuchi, Youichi
Araoka, Tsuyoshi
Oose, Naoyuki
Tsutsumi, Takashi
Yoshikawa, Mitsuru
Tatera, Katsumi
Harashima, Masayuki
Sano, Yukio
Morisaki, Eisuke
Takei, Manabu
Miyajima, Masaaki
Kimura, Hiroshi
Otsuki, Akihiro
Fukuda, Kenji
Okumura, Hajime
Kimoto, Tsunenobu
description Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p super(++) collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize high channel mobility. We were able to achieve an ultrahigh blocking voltage of more than 16 kV, extremely low forward voltage drop of 5 V at 100 A/cm super(2) and small threshold voltage shift (< 0.1 V). These characteristics are useful for Smart Grid and HVDC systems, the use of which would realize a low carbon emission society.
doi_str_mv 10.1109/IEDM.2013.6724576
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1692412075</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1692412075</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_16924120753</originalsourceid><addsrcrecordid>eNqVjMtOAjEUQBsTE1H8AHd3iYsZ20I7ma2ISqIrCHFHLniHqV7aOu2o_L2P-AOuzuKcHCEulCyVkvXVfHbzWGqpxqWt9MRU9kgMtDK2kKp6OhGnKb1IqStTm4GID-EDVpD6zai5BPTP0LpdywfoiB1umEBZeF1Bz7nDHwXvgTPuCBZuCg27WORDJPDFtkXvicHtI6PPmF3wv0OKLuOnQ4b53fVyKI4b5ETnfzwTo9vZcnpfxC689ZTyeu_Slvj7QaFPa2VrPVFaVmb8j_QLkjNR1w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1692412075</pqid></control><display><type>article</type><title>Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT</title><source>IEEE Xplore All Conference Series</source><creator>Yonezawa, Yoshiyuki ; Mizushima, Tomonori ; Takenaka, Kensuke ; Fujisawa, Hiroyuki ; Kato, Tomohisa ; Harada, Shinsuke ; Tanaka, Yasunori ; Okamoto, Mitsuo ; Sometani, Mitsuru ; Okamoto, Dai ; Kumagai, Naoki ; Matsunaga, Shinichiro ; Deguchi, Tadayoshi ; Arai, Manabu ; Hatakeyama, Tetsuo ; Makifuchi, Youichi ; Araoka, Tsuyoshi ; Oose, Naoyuki ; Tsutsumi, Takashi ; Yoshikawa, Mitsuru ; Tatera, Katsumi ; Harashima, Masayuki ; Sano, Yukio ; Morisaki, Eisuke ; Takei, Manabu ; Miyajima, Masaaki ; Kimura, Hiroshi ; Otsuki, Akihiro ; Fukuda, Kenji ; Okumura, Hajime ; Kimoto, Tsunenobu</creator><creatorcontrib>Yonezawa, Yoshiyuki ; Mizushima, Tomonori ; Takenaka, Kensuke ; Fujisawa, Hiroyuki ; Kato, Tomohisa ; Harada, Shinsuke ; Tanaka, Yasunori ; Okamoto, Mitsuo ; Sometani, Mitsuru ; Okamoto, Dai ; Kumagai, Naoki ; Matsunaga, Shinichiro ; Deguchi, Tadayoshi ; Arai, Manabu ; Hatakeyama, Tetsuo ; Makifuchi, Youichi ; Araoka, Tsuyoshi ; Oose, Naoyuki ; Tsutsumi, Takashi ; Yoshikawa, Mitsuru ; Tatera, Katsumi ; Harashima, Masayuki ; Sano, Yukio ; Morisaki, Eisuke ; Takei, Manabu ; Miyajima, Masaaki ; Kimura, Hiroshi ; Otsuki, Akihiro ; Fukuda, Kenji ; Okumura, Hajime ; Kimoto, Tsunenobu</creatorcontrib><description>Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p super(++) collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize high channel mobility. We were able to achieve an ultrahigh blocking voltage of more than 16 kV, extremely low forward voltage drop of 5 V at 100 A/cm super(2) and small threshold voltage shift (&lt; 0.1 V). These characteristics are useful for Smart Grid and HVDC systems, the use of which would realize a low carbon emission society.</description><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.2013.6724576</identifier><language>eng</language><subject>Carbon ; Channels ; Electric potential ; Epitaxy ; Implantation ; Silicon carbide ; Threshold voltage ; Voltage</subject><ispartof>Technical digest - International Electron Devices Meeting, 2013-12, p.6.6.1-6.6.4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yonezawa, Yoshiyuki</creatorcontrib><creatorcontrib>Mizushima, Tomonori</creatorcontrib><creatorcontrib>Takenaka, Kensuke</creatorcontrib><creatorcontrib>Fujisawa, Hiroyuki</creatorcontrib><creatorcontrib>Kato, Tomohisa</creatorcontrib><creatorcontrib>Harada, Shinsuke</creatorcontrib><creatorcontrib>Tanaka, Yasunori</creatorcontrib><creatorcontrib>Okamoto, Mitsuo</creatorcontrib><creatorcontrib>Sometani, Mitsuru</creatorcontrib><creatorcontrib>Okamoto, Dai</creatorcontrib><creatorcontrib>Kumagai, Naoki</creatorcontrib><creatorcontrib>Matsunaga, Shinichiro</creatorcontrib><creatorcontrib>Deguchi, Tadayoshi</creatorcontrib><creatorcontrib>Arai, Manabu</creatorcontrib><creatorcontrib>Hatakeyama, Tetsuo</creatorcontrib><creatorcontrib>Makifuchi, Youichi</creatorcontrib><creatorcontrib>Araoka, Tsuyoshi</creatorcontrib><creatorcontrib>Oose, Naoyuki</creatorcontrib><creatorcontrib>Tsutsumi, Takashi</creatorcontrib><creatorcontrib>Yoshikawa, Mitsuru</creatorcontrib><creatorcontrib>Tatera, Katsumi</creatorcontrib><creatorcontrib>Harashima, Masayuki</creatorcontrib><creatorcontrib>Sano, Yukio</creatorcontrib><creatorcontrib>Morisaki, Eisuke</creatorcontrib><creatorcontrib>Takei, Manabu</creatorcontrib><creatorcontrib>Miyajima, Masaaki</creatorcontrib><creatorcontrib>Kimura, Hiroshi</creatorcontrib><creatorcontrib>Otsuki, Akihiro</creatorcontrib><creatorcontrib>Fukuda, Kenji</creatorcontrib><creatorcontrib>Okumura, Hajime</creatorcontrib><creatorcontrib>Kimoto, Tsunenobu</creatorcontrib><title>Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT</title><title>Technical digest - International Electron Devices Meeting</title><description>Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p super(++) collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize high channel mobility. We were able to achieve an ultrahigh blocking voltage of more than 16 kV, extremely low forward voltage drop of 5 V at 100 A/cm super(2) and small threshold voltage shift (&lt; 0.1 V). These characteristics are useful for Smart Grid and HVDC systems, the use of which would realize a low carbon emission society.</description><subject>Carbon</subject><subject>Channels</subject><subject>Electric potential</subject><subject>Epitaxy</subject><subject>Implantation</subject><subject>Silicon carbide</subject><subject>Threshold voltage</subject><subject>Voltage</subject><issn>2156-017X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVjMtOAjEUQBsTE1H8AHd3iYsZ20I7ma2ISqIrCHFHLniHqV7aOu2o_L2P-AOuzuKcHCEulCyVkvXVfHbzWGqpxqWt9MRU9kgMtDK2kKp6OhGnKb1IqStTm4GID-EDVpD6zai5BPTP0LpdywfoiB1umEBZeF1Bz7nDHwXvgTPuCBZuCg27WORDJPDFtkXvicHtI6PPmF3wv0OKLuOnQ4b53fVyKI4b5ETnfzwTo9vZcnpfxC689ZTyeu_Slvj7QaFPa2VrPVFaVmb8j_QLkjNR1w</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Yonezawa, Yoshiyuki</creator><creator>Mizushima, Tomonori</creator><creator>Takenaka, Kensuke</creator><creator>Fujisawa, Hiroyuki</creator><creator>Kato, Tomohisa</creator><creator>Harada, Shinsuke</creator><creator>Tanaka, Yasunori</creator><creator>Okamoto, Mitsuo</creator><creator>Sometani, Mitsuru</creator><creator>Okamoto, Dai</creator><creator>Kumagai, Naoki</creator><creator>Matsunaga, Shinichiro</creator><creator>Deguchi, Tadayoshi</creator><creator>Arai, Manabu</creator><creator>Hatakeyama, Tetsuo</creator><creator>Makifuchi, Youichi</creator><creator>Araoka, Tsuyoshi</creator><creator>Oose, Naoyuki</creator><creator>Tsutsumi, Takashi</creator><creator>Yoshikawa, Mitsuru</creator><creator>Tatera, Katsumi</creator><creator>Harashima, Masayuki</creator><creator>Sano, Yukio</creator><creator>Morisaki, Eisuke</creator><creator>Takei, Manabu</creator><creator>Miyajima, Masaaki</creator><creator>Kimura, Hiroshi</creator><creator>Otsuki, Akihiro</creator><creator>Fukuda, Kenji</creator><creator>Okumura, Hajime</creator><creator>Kimoto, Tsunenobu</creator><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20131201</creationdate><title>Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT</title><author>Yonezawa, Yoshiyuki ; Mizushima, Tomonori ; Takenaka, Kensuke ; Fujisawa, Hiroyuki ; Kato, Tomohisa ; Harada, Shinsuke ; Tanaka, Yasunori ; Okamoto, Mitsuo ; Sometani, Mitsuru ; Okamoto, Dai ; Kumagai, Naoki ; Matsunaga, Shinichiro ; Deguchi, Tadayoshi ; Arai, Manabu ; Hatakeyama, Tetsuo ; Makifuchi, Youichi ; Araoka, Tsuyoshi ; Oose, Naoyuki ; Tsutsumi, Takashi ; Yoshikawa, Mitsuru ; Tatera, Katsumi ; Harashima, Masayuki ; Sano, Yukio ; Morisaki, Eisuke ; Takei, Manabu ; Miyajima, Masaaki ; Kimura, Hiroshi ; Otsuki, Akihiro ; Fukuda, Kenji ; Okumura, Hajime ; Kimoto, Tsunenobu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_16924120753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Carbon</topic><topic>Channels</topic><topic>Electric potential</topic><topic>Epitaxy</topic><topic>Implantation</topic><topic>Silicon carbide</topic><topic>Threshold voltage</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Yonezawa, Yoshiyuki</creatorcontrib><creatorcontrib>Mizushima, Tomonori</creatorcontrib><creatorcontrib>Takenaka, Kensuke</creatorcontrib><creatorcontrib>Fujisawa, Hiroyuki</creatorcontrib><creatorcontrib>Kato, Tomohisa</creatorcontrib><creatorcontrib>Harada, Shinsuke</creatorcontrib><creatorcontrib>Tanaka, Yasunori</creatorcontrib><creatorcontrib>Okamoto, Mitsuo</creatorcontrib><creatorcontrib>Sometani, Mitsuru</creatorcontrib><creatorcontrib>Okamoto, Dai</creatorcontrib><creatorcontrib>Kumagai, Naoki</creatorcontrib><creatorcontrib>Matsunaga, Shinichiro</creatorcontrib><creatorcontrib>Deguchi, Tadayoshi</creatorcontrib><creatorcontrib>Arai, Manabu</creatorcontrib><creatorcontrib>Hatakeyama, Tetsuo</creatorcontrib><creatorcontrib>Makifuchi, Youichi</creatorcontrib><creatorcontrib>Araoka, Tsuyoshi</creatorcontrib><creatorcontrib>Oose, Naoyuki</creatorcontrib><creatorcontrib>Tsutsumi, Takashi</creatorcontrib><creatorcontrib>Yoshikawa, Mitsuru</creatorcontrib><creatorcontrib>Tatera, Katsumi</creatorcontrib><creatorcontrib>Harashima, Masayuki</creatorcontrib><creatorcontrib>Sano, Yukio</creatorcontrib><creatorcontrib>Morisaki, Eisuke</creatorcontrib><creatorcontrib>Takei, Manabu</creatorcontrib><creatorcontrib>Miyajima, Masaaki</creatorcontrib><creatorcontrib>Kimura, Hiroshi</creatorcontrib><creatorcontrib>Otsuki, Akihiro</creatorcontrib><creatorcontrib>Fukuda, Kenji</creatorcontrib><creatorcontrib>Okumura, Hajime</creatorcontrib><creatorcontrib>Kimoto, Tsunenobu</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Technical digest - International Electron Devices Meeting</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yonezawa, Yoshiyuki</au><au>Mizushima, Tomonori</au><au>Takenaka, Kensuke</au><au>Fujisawa, Hiroyuki</au><au>Kato, Tomohisa</au><au>Harada, Shinsuke</au><au>Tanaka, Yasunori</au><au>Okamoto, Mitsuo</au><au>Sometani, Mitsuru</au><au>Okamoto, Dai</au><au>Kumagai, Naoki</au><au>Matsunaga, Shinichiro</au><au>Deguchi, Tadayoshi</au><au>Arai, Manabu</au><au>Hatakeyama, Tetsuo</au><au>Makifuchi, Youichi</au><au>Araoka, Tsuyoshi</au><au>Oose, Naoyuki</au><au>Tsutsumi, Takashi</au><au>Yoshikawa, Mitsuru</au><au>Tatera, Katsumi</au><au>Harashima, Masayuki</au><au>Sano, Yukio</au><au>Morisaki, Eisuke</au><au>Takei, Manabu</au><au>Miyajima, Masaaki</au><au>Kimura, Hiroshi</au><au>Otsuki, Akihiro</au><au>Fukuda, Kenji</au><au>Okumura, Hajime</au><au>Kimoto, Tsunenobu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT</atitle><jtitle>Technical digest - International Electron Devices Meeting</jtitle><date>2013-12-01</date><risdate>2013</risdate><spage>6.6.1</spage><epage>6.6.4</epage><pages>6.6.1-6.6.4</pages><eissn>2156-017X</eissn><abstract>Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p super(++) collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize high channel mobility. We were able to achieve an ultrahigh blocking voltage of more than 16 kV, extremely low forward voltage drop of 5 V at 100 A/cm super(2) and small threshold voltage shift (&lt; 0.1 V). These characteristics are useful for Smart Grid and HVDC systems, the use of which would realize a low carbon emission society.</abstract><doi>10.1109/IEDM.2013.6724576</doi></addata></record>
fulltext fulltext
identifier EISSN: 2156-017X
ispartof Technical digest - International Electron Devices Meeting, 2013-12, p.6.6.1-6.6.4
issn 2156-017X
language eng
recordid cdi_proquest_miscellaneous_1692412075
source IEEE Xplore All Conference Series
subjects Carbon
Channels
Electric potential
Epitaxy
Implantation
Silicon carbide
Threshold voltage
Voltage
title Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T12%3A36%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20V%20sub(f)%20and%20highly%20reliable%2016%20kV%20ultrahigh%20voltage%20SiC%20flip-type%20n-channel%20implantation%20and%20epitaxial%20IGBT&rft.jtitle=Technical%20digest%20-%20International%20Electron%20Devices%20Meeting&rft.au=Yonezawa,%20Yoshiyuki&rft.date=2013-12-01&rft.spage=6.6.1&rft.epage=6.6.4&rft.pages=6.6.1-6.6.4&rft.eissn=2156-017X&rft_id=info:doi/10.1109/IEDM.2013.6724576&rft_dat=%3Cproquest%3E1692412075%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_miscellaneous_16924120753%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1692412075&rft_id=info:pmid/&rfr_iscdi=true