Nanoscale ( similar to 10nm) 3D vertical ReRAM and NbO sub(2) threshold selector with TiN electrode

The scaling and 3-D integration issues of NbO sub(2) with threshold switching characteristics were investigated for ReRAM selector device. To avoid the process problems of Pt electrode, we tested ReRAM and selector devices with conventional electrodes (TiN and W). By adopting 10nm-thick TiN bottom e...

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Bibliographic Details
Published in:Technical digest - International Electron Devices Meeting 2013-12, p.10.5.1-10.5.4
Main Authors: Cha, Euijun, Woo, Jiyong, Lee, Daeseok, Lee, Sangheon, Song, Jeonghwan, Koo, Yunmo, Lee, Jihyun, Park, Chan Gyung, Yang, Moon Young, Kamiya, Katsumasa, Shiraishi, Kenji, Magyari-Kope, Blanka, Nishi, Yoshio, Hwang, Hyunsang
Format: Article
Language:English
Subjects:
Devices
Electrodes
Nanostructure
Selectors
Thermal conductivity
Three dimensional
Thresholds
Tin
Online Access:Get full text
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Summary:The scaling and 3-D integration issues of NbO sub(2) with threshold switching characteristics were investigated for ReRAM selector device. To avoid the process problems of Pt electrode, we tested ReRAM and selector devices with conventional electrodes (TiN and W). By adopting 10nm-thick TiN bottom electrode with low thermal conductivity, we could significantly reduce the threshold current for insulator-metal transition (I-M-T) due to the heat confinement effect. We have evaluated for the first time both 1S1R (NbO sub(2)/TaO sub(x)) and hybrid (NbO sub(2)/Nb sub(2)O sub( 5)) devices. We have confirmed the feasibility of high density vertical memory device by adopting NbO sub(2) I-M-T selector device.
ISSN:2156-017X
DOI:10.1109/IEDM.2013.6724602