Generation and transport of valley-polarized current in transition-metal dichalcogenides

In two-dimensional crystals of transition-metal dichalcogenides (TMDC) having strong spin-orbit interaction such as monolayer WSe sub(2), quantum states can be labeled by a valley index [tau] defined in the reciprocal space and the spin index s. We developed a first-principles theoretical formalism...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2014-11, Vol.90 (19), Article 195428
Main Authors: Zhang, Lei, Gong, Kui, Chen, Jingzhe, Liu, Lei, Zhu, Yu, Xiao, Di, Guo, Hong
Format: Article
Language:English
Subjects:
Channels
Condensed matter
Depolarization
Devices
Polarized light
Semiconductor devices
Transistors
Transport
Valleys
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Summary:In two-dimensional crystals of transition-metal dichalcogenides (TMDC) having strong spin-orbit interaction such as monolayer WSe sub(2), quantum states can be labeled by a valley index [tau] defined in the reciprocal space and the spin index s. We developed a first-principles theoretical formalism to both qualitatively and quantitatively predict nonequilibrium quantum transport of valley-polarized currents. We propose a WSe sub(2) TMDC transistor to selectively deliver net valley- and spin-polarized current I sub([tau],s) to the source or drain by circularly polarized light under external bias. Due to the lack of translational symmetry of the real-space device, we predict a depolarization effect that increases with the decrease of the channel length of the transistor.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.90.195428