Characterization of two-threshold behavior of the emission from a GaAs microcavity

We compare two regimes indicative of polariton lasing and photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the quantum-well exciton. In particular, we investigate the cavity emission subsequent to nonresonant pulsed excitation. For the ground stat...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-02, Vol.85 (7), Article 075318
Main Authors: Tempel, Jean-Sebastian, Veit, Franziska, Aßmann, Marc, Kreilkamp, Lars E., Rahimi-Iman, Arash, Löffler, Andreas, Höfling, Sven, Reitzenstein, Stephan, Worschech, Lukas, Forchel, Alfred, Bayer, Manfred
Format: Article
Language:English
Subjects:
Dispersions
Emission
Emission analysis
Gallium arsenide
Gallium arsenides
Microcavities
Photons
Semiconductors
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Summary:We compare two regimes indicative of polariton lasing and photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the quantum-well exciton. In particular, we investigate the cavity emission subsequent to nonresonant pulsed excitation. For the ground state emission from the lower energy-momentum dispersion branch we find a two-threshold behavior in the input-output curve where each transition is accompanied by characteristic changes of the in-plane mode dispersion. We demonstrate that the thresholds are unambiguously evidenced in the photon statistics of the emission based on the second-order correlation function. Moreover, the distinct two-threshold behavior is confirmed in the evolution of the emission pulse duration. Our findings show that a comprehensive study of spectral and temporal characteristics of the emission from a semiconductor microcavity can be used to characterize the different emission regimes.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.85.075318