Temperature-Dependent Electron Shuffle in Molecular Group13/15 Intermetallic Complexes

Monovalent RAl (R=HC[C(Me)N(2,6-iPr2C6H3)]2) reacts with E2Et4 (E=Sb, Bi) with insertion into the weak EE bond and subsequent formation of RAl(EEt2)2 (E=Sb 1; Bi 2). The analogous reactions of RGa with E2Et4 yield a temperature-dependent equilibrium between RGa(EEt2)2 (E=Sb 3; Bi 4) and the starting...

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Bibliographic Details
Published in:Angewandte Chemie International Edition 2014-10, Vol.53 (43), p.11587-11591
Main Authors: Ganesamoorthy, Chelladurai, Blaser, Dieter, Wolper, Christoph, Schulz, Stephan
Format: Article
Language:English
Subjects:
Bonding strength
Chemical bonds
Cleavage
Formations
Insertion
Intermetallics
Online Access:Get full text
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Summary:Monovalent RAl (R=HC[C(Me)N(2,6-iPr2C6H3)]2) reacts with E2Et4 (E=Sb, Bi) with insertion into the weak EE bond and subsequent formation of RAl(EEt2)2 (E=Sb 1; Bi 2). The analogous reactions of RGa with E2Et4 yield a temperature-dependent equilibrium between RGa(EEt2)2 (E=Sb 3; Bi 4) and the starting reagents. RIn does not interact with Sb2Et4 under various reaction conditions, but formation of RIn(BiEt2)2 (5) was observed in the reaction with Bi2Et4 at low temperature.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201406304