Two-step growth of metamorphic GaAs/AlGaAs mirror on an InP substrate by MOCVD

• Published in: Thin solid films 2013-09, Vol.542, p.317-326
• Main Authors: Ohiso, Yoshitaka, Iga, Ryuzo
• Format: Article
• Language: English
• Subjects: Aluminum gallium arsenides; Bragg reflectors; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Distributed Bragg reflector; Exact sciences and technology; Gallium arsenide; Gallium arsenides; Indium phosphides; Materials science; Metal-organic chemical vapor deposition; Metamorphic; Metamorphic III-V semiconductor; Methods of deposition of films and coatings; film growth and epitaxy; Other semiconductors; Physics; Reflectivity; Specific materials; Structure and morphology; thickness; Surface chemistry; Surface morphology; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; Two-step growth
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.07.006

This paper describes a high-reflectivity metamorphic undoped GaAs/Al0.98Ga0.02As distributed Bragg reflector grown on an InP substrate by metalorganic chemical vapor deposition (MOCVD). Optimal two-step growth conditions at low and high growth temperatures can provide a smooth surface morphology, leading to a high reflectivity (>99.5%) with little optical scattering loss. We also show that a large mismatched interface does not create dislocations in the active layer at a slow cooling rate after the growth sequence. These results indicate that metamorphic GaAs/Al0.98Ga0.02As directly grown on an InP substrate by MOCVD is promising for application to InP-based vertical cavity surface-emitting laser structures. •We report AlGaAs/GaAs metamorphic mirror by metal-organic chemical vapor deposition.•We explain that a high reflectivity is difficult to achieve at a constant temperature.•We show two-step growth can provide a high-reflectivity mirror. (>99.5%)•A large mismatched interface does not create dislocations at a slow cooling rate.