Variable-Range Hopping Conduction in Ion-Gel-Gated Electrochemical Transistors of Regioregular Poly(3-hexylthiophene)

Ion-gel-gated transistors enable controlled carrier doping into conjugated polymers in identical devices measurable at low temperatures. Using this technique, the carrier transport of regioregular poly(3-hexylthiophene) was investigated in a wide temperature range down to 15 K. At room temperature,...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Physical Society of Japan 2012-11, Vol.81 (11), p.1-1
Main Authors: Ando, Yoshihiro, Ito, Hiroshi, Watanabe, Shun-ichiro, Kuroda, Shin-ichi
Format: Article
Language:English
Subjects:
Activation
Carrier transport
Carriers
Channels
Chemistry
Conductivity
Doping
Electric properties
Low temperature physics
Polymers
Semiconductor devices
Temperature effects
Transistors
Wavefunctions
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ion-gel-gated transistors enable controlled carrier doping into conjugated polymers in identical devices measurable at low temperatures. Using this technique, the carrier transport of regioregular poly(3-hexylthiophene) was investigated in a wide temperature range down to 15 K. At room temperature, carrier mobility exhibited an electrochemical behavior with a minimum at a doping level of approximately 0.4% and a subsequent sharp increase up to 0.5 cm ... V ... s ... . At doping levels above ~3%, the ohmic conductivity of the transistor channel deviated from thermal activation and showed a quasi-one-dimensional variable-range hopping behavior. This result indicates the enhanced carrier transport through the overlap of carrier wavefunctions developing toward a doping level of ~10% under electrochemical doping in a transistor channel. (ProQuest: ... denotes formulae/symbols omitted.)
ISSN:0031-9015
1347-4073