Growth of amorphous SiO2 nanowires on Si using a Pd/Au thin film as a catalyst

Nanowires of amorphous SiO2 were synthesized by thermal processing of a Si(100) substrate at 1100 C in the presence of a nitrogen flow, and using a 15 nm thick high silicon-solubility Pd/Au film as a catalyst. The substrate itself was the only source of silicon for the nanowire growth. The nanostruc...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2004-08, Vol.79 (3), p.461-467
Main Authors: ELECHIGUERRA, J. L, MANRIQUEZ, J. A, YACAMAN, M. J
Format: Article
Language:English
Subjects:
Catalysts
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Gold
Materials science
Methods of nanofabrication
Nanostructure
Nanowires
Palladium
Physics
Silicon
Silicon dioxide
Silicon substrates
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Summary:Nanowires of amorphous SiO2 were synthesized by thermal processing of a Si(100) substrate at 1100 C in the presence of a nitrogen flow, and using a 15 nm thick high silicon-solubility Pd/Au film as a catalyst. The substrate itself was the only source of silicon for the nanowire growth. The nanostructures produced were characterized by high resolution transmission and scanning electron microscopy and by X-ray diffraction. The nanowire growth is consistent with the vapor-liquid-solid (VLS) mechanism, with particles of Pd2Si and Au(Pd) being observed to form from the reaction between silicon and the catalytic film, and to remain at the tip of the wires. The synthesized nanowires showed a well defined morphology which could be very interesting for lasing applications.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-004-2597-y