Thermal annealing effect on the structural properties of epitaxial growth of GaP on Si substrate

The effect of post-growth annealing of epitaxial gallium phosphide grown on silicon substrates using gas-source molecular-beam epitaxy is described. The epitaxial layers were grown at substrate temperatures ranging from 250 to 550°C. After optimizing the growth temperature, the prepared films were t...

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Bibliographic Details
Published in:Journal of crystal growth 2015-06, Vol.419, p.42-46
Main Authors: Hussein, Emad H., Dadgostar, Shabnam, Hatami, Fariba, Masselink, W.T.
Format: Article
Language:English
Subjects:
A1. Annealing
A1. Crystal structure
A1. RHEED
A1. XRD
Annealing
B1. GaP/Si
Constants
Crystal growth
Diffraction
Epitaxial growth
Microscopy
Silicon substrates
X-ray diffraction
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Summary:The effect of post-growth annealing of epitaxial gallium phosphide grown on silicon substrates using gas-source molecular-beam epitaxy is described. The epitaxial layers were grown at substrate temperatures ranging from 250 to 550°C. After optimizing the growth temperature, the prepared films were thermally annealed. Two thermal annealing methods are compared: annealing at a constant temperature and step-graded annealing, in which the temperature is raised by a constant rate per unit time. The effect of the thermal annealing on the crystal structure was studied by characterizing the epilayer using reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) measurements, and scanning-electron microscopy (SEM). It was found that after thermal annealing, the epilayer exhibited a reconstructed RHEED pattern, and its quality was much improved. •Epitaxial growth of GaP/Si heterostructure.•New method of thermal annealing is proposed.•Effect of the thermal annealing on the grown films is studied.•XRD and SEM characterizations confirm that this method is applicable.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2015.02.090