Interaction of terahertz radiation with surface and interface plasmonaphonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

Surface phonon and plasmonaphonon polariton characteristics of GaAs, Al x Ga1?x As/GaAs, and GaN/Al2O3 layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the latt...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2013-01, Vol.110 (1), p.153-156
Main Authors: Pozela, J, Pozela, K, Silenas, A, Sirmulis, E, Juciene, V
Format: Article
Language:English
Subjects:
Aluminum
Aluminum gallium arsenides
Aluminum oxide
Density
Gallium arsenide
Gallium arsenides
Gallium nitrides
Materials science
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Summary:Surface phonon and plasmonaphonon polariton characteristics of GaAs, Al x Ga1?x As/GaAs, and GaN/Al2O3 layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the lattice composition and free electron density in these layered structures are experimentally observed and analyzed.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-012-7473-6