Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers

Typical CoFeB/MgO frames ensuring interface perpendicular magnetic anisotropy (PMA) features are one of the most reliable building blocks to meet the demand of PMA-based memory devices. However, employing the CoFeB/MgO frame with a Ta buffer layer has been restricted by the rapid PMA degradation tha...

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Bibliographic Details
Published in:Acta materialia 2015-04, Vol.87, p.259-265
Main Authors: An, Gwang-Guk, Lee, Ja-Bin, Yang, Seung-Mo, Kim, Jae-Hong, Chung, Woo-Seong, Hong, Jin-Pyo
Format: Article
Language:English
Subjects:
Annealing
Buffers
Capping
Data storage
Frames
Magnesium oxide
Magnetic anisotropy
Memory devices
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Summary:Typical CoFeB/MgO frames ensuring interface perpendicular magnetic anisotropy (PMA) features are one of the most reliable building blocks to meet the demand of PMA-based memory devices. However, employing the CoFeB/MgO frame with a Ta buffer layer has been restricted by the rapid PMA degradation that occurs during annealing at temperatures greater than 300 degree C and the need of an ultrathin CoFeB layer of approximately 1.3nm. Thus, the ability to enhance thermally strong PMA characteristics is still a key step toward extending their use. Here, we examine the effect of W layers on PMA features through both W buffer/CoFeB/MgO and MgO/CeFeB/W capping frames at various annealing temperatures. Highly stable PMA was achieved up to 450 degree C at a specific W thickness, along with the presence of the dominant PMA properties at a relatively thick CoFeB greater than 1.3nm and the achievement of a high Keff of approximately 5Merg/cc.
ISSN:1359-6454
DOI:10.1016/j.actamat.2015.01.022