Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

[Display omitted] •Stress analysis with dielectrics and rolling curvatures is by finite element method.•Inverted-coplanar with SiOx has the smallest stress for mechanical rolling.•The local extreme stress would also induce film cracks or warps.•The feasibility of oxide TFT with optimization the stru...

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Bibliographic Details
Published in:Microelectronic engineering 2015-04, Vol.138, p.77-80
Main Authors: Lee, M.H., Hsu, S.-M., Shen, J.-D., Liu, C.
Format: Article
Language:English
Subjects:
Aluminum
Corners
Finite element method
Flexible
IGZO TFT
Mathematical analysis
Semiconductor devices
Shear stress
Stress
Stresses
Thin film transistors
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Summary:[Display omitted] •Stress analysis with dielectrics and rolling curvatures is by finite element method.•Inverted-coplanar with SiOx has the smallest stress for mechanical rolling.•The local extreme stress would also induce film cracks or warps.•The feasibility of oxide TFT with optimization the structures and dielectrics. The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with −0.65GPa (x-direction stress), −0.22GPa (y-direction stress), and −0.21GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2015.02.020