Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C-and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and the conduction bands that can be distinguished...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235310
Main Authors: Deretzis, I., Camarda, M., La Via, F., La Magna, A.
Format: Article
Language:English
Subjects:
Backscattering
Condensed matter
Devices
Mathematical analysis
Silicon carbide
Stacking faults
Transport
Wave propagation
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Summary:We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C-and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and the conduction bands that can be distinguished for their enhanced density of states at particular wave-number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for n-doped systems. We argue that resonant scattering from SFs should be one of the principal degrading mechanisms for device operation in silicon carbide.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.85.235310