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Electron transport across a metal-organic interface: Simulations using nonequilibrium Green's function and density functional theory
We simulate the electron transport across the Au(111)-pentacene interface using nonequilibrium Green's functions and density-functional theory (NEGF-DFT), and calculate the bias-dependent electron transmission. We find that the electrical contact resistance is dominated by the formation of a Sc...
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Published in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-08, Vol.88 (7), Article 075317 |
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container_title | Physical review. B, Condensed matter and materials physics |
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creator | Stokbro, Kurt Smidstrup, Søren |
description | We simulate the electron transport across the Au(111)-pentacene interface using nonequilibrium Green's functions and density-functional theory (NEGF-DFT), and calculate the bias-dependent electron transmission. We find that the electrical contact resistance is dominated by the formation of a Schottky barrier at the interface, and show that the conventional semiconductor transport models across Schottky barriers need to be modified in order to describe the simulation data. We present an extension of the conventional Schottky barrier transport model, which can describe our simulation results and rationalize recent experimental data. |
doi_str_mv | 10.1103/PhysRevB.88.075317 |
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We present an extension of the conventional Schottky barrier transport model, which can describe our simulation results and rationalize recent experimental data.</description><subject>Barriers</subject><subject>Computer simulation</subject><subject>Condensed matter</subject><subject>Electron transport</subject><subject>Green's functions</subject><subject>Mathematical models</subject><subject>Semiconductors</subject><subject>Transport</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo9kLFOwzAURSMEEqXwA0zeYEl5duLaYYOqFKRKIOjAFjnOS2uU2K3tIHXnw2kpML2rd4_ucJLkksKIUshuXlbb8Iqf9yMpRyB4RsVRMqCcQ8oy_n68y1DIFCijp8lZCB8ANC9yNki-pi3q6J0l0Ssb1s5HorR3IRBFOoyqTZ1fKms0MTaib5TGW_Jmur5V0TgbSB-MXRLrLG5605rKm74jM49orwJpeqv3GFG2JjXaYOL2_6laElfo_PY8OWlUG_Di9w6TxcN0MXlM58-zp8ndPNVMQkxrMa6gKpjMVcWlYqquxvWuwkZDDlnBgWdAi4I3kjVaNmPNFKsAQeaCFyIbJteH2bV3mx5DLDsTNLatsuj6UFIBheBcCLZD2QH9UeGxKdfedMpvSwrl3nj5Z7yUsjwYz74BmcJ5vg</recordid><startdate>20130827</startdate><enddate>20130827</enddate><creator>Stokbro, Kurt</creator><creator>Smidstrup, Søren</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130827</creationdate><title>Electron transport across a metal-organic interface: Simulations using nonequilibrium Green's function and density functional theory</title><author>Stokbro, Kurt ; Smidstrup, Søren</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c280t-d76b0b9284ab58a2adb6dc28efc04039505301995f82fc8f6c2a2b0e08475973</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Barriers</topic><topic>Computer simulation</topic><topic>Condensed matter</topic><topic>Electron transport</topic><topic>Green's functions</topic><topic>Mathematical models</topic><topic>Semiconductors</topic><topic>Transport</topic><toplevel>online_resources</toplevel><creatorcontrib>Stokbro, Kurt</creatorcontrib><creatorcontrib>Smidstrup, Søren</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Stokbro, Kurt</au><au>Smidstrup, Søren</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron transport across a metal-organic interface: Simulations using nonequilibrium Green's function and density functional theory</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2013-08-27</date><risdate>2013</risdate><volume>88</volume><issue>7</issue><artnum>075317</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We simulate the electron transport across the Au(111)-pentacene interface using nonequilibrium Green's functions and density-functional theory (NEGF-DFT), and calculate the bias-dependent electron transmission. We find that the electrical contact resistance is dominated by the formation of a Schottky barrier at the interface, and show that the conventional semiconductor transport models across Schottky barriers need to be modified in order to describe the simulation data. We present an extension of the conventional Schottky barrier transport model, which can describe our simulation results and rationalize recent experimental data.</abstract><doi>10.1103/PhysRevB.88.075317</doi></addata></record> |
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subjects | Barriers Computer simulation Condensed matter Electron transport Green's functions Mathematical models Semiconductors Transport |
title | Electron transport across a metal-organic interface: Simulations using nonequilibrium Green's function and density functional theory |
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