Resistive switching in metallic Ag sub(2)S memristors due to a local overheating induced phase transition

Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag sub(2)S layer are investigated as a function of temperature at different biasing conditions. The observed switching threshold voltages along with the ON and OFF state r...

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Bibliographic Details
Published in:Nanoscale 2015-06, Vol.7 (26), p.11248-11254
Main Authors: Gubicza, Agnes, Csontos, Miklos, Halbritter, Andras, Mihaly, Gyorgy
Format: Article
Language:English
Subjects:
Inert
Memory devices
Nanostructure
Overheating
Phase transformations
Resistors
Switching
Thin films
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Summary:Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag sub(2)S layer are investigated as a function of temperature at different biasing conditions. The observed switching threshold voltages along with the ON and OFF state resistances are quantitatively understood by taking the local overheating of the junction volume and the resulting structural phase transition of the Ag sub(2)S matrix into account. Our results demonstrate that the essential characteristics of the resistive switching in Ag sub(2)S based nanojunctions can be routinely optimized by suitable sample preparation and biasing schemes.
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr02536b