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Resistive switching in metallic Ag sub(2)S memristors due to a local overheating induced phase transition

Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag sub(2)S layer are investigated as a function of temperature at different biasing conditions. The observed switching threshold voltages along with the ON and OFF state r...

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Published in:	Nanoscale 2015-06, Vol.7 (26), p.11248-11254
Main Authors:	Gubicza, Agnes, Csontos, Miklos, Halbritter, Andras, Mihaly, Gyorgy
Format:	Article
Language:	English
Subjects:	Inert Memory devices Nanostructure Overheating Phase transformations Resistors Switching Thin films
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creator	Gubicza, Agnes Csontos, Miklos Halbritter, Andras Mihaly, Gyorgy
description	Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag sub(2)S layer are investigated as a function of temperature at different biasing conditions. The observed switching threshold voltages along with the ON and OFF state resistances are quantitatively understood by taking the local overheating of the junction volume and the resulting structural phase transition of the Ag sub(2)S matrix into account. Our results demonstrate that the essential characteristics of the resistive switching in Ag sub(2)S based nanojunctions can be routinely optimized by suitable sample preparation and biasing schemes.
doi_str_mv	10.1039/c5nr02536b
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source	Royal Society of Chemistry:Jisc Collections:Royal Society of Chemistry Read and Publish 2022-2024 (reading list)
subjects	Inert Memory devices Nanostructure Overheating Phase transformations Resistors Switching Thin films
title	Resistive switching in metallic Ag sub(2)S memristors due to a local overheating induced phase transition
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