Molecular modification of highly degenerate semiconductor as an active electrode to enhance the performance of supercapacitors

Highly conducting antimony doped tin oxide (SnO2:Sb) films are electrografted with suitable organic molecules to study their electrolytic behavior. A series of organic molecules, such as heptanethiol, dodecanethiol and octadecanethiol are bonded to electrode surfaces. Electrolytic capacitors were fo...

Full description

Saved in:
Bibliographic Details
Published in:Materials research express 2014-12, Vol.1 (4), p.45508-14
Main Authors: Mundinamani, S P, Rabinal, M K
Format: Article
Language:English
Subjects:
Capacitance
Capacitors
Charge
cyclic voltammetry
Discharge
Electrodes
Electrolytic capacitors
highly degenerate semiconductor
molecular modification
organic monolayers
Reduction (electrolytic)
Semiconductors
supercapacitor
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Highly conducting antimony doped tin oxide (SnO2:Sb) films are electrografted with suitable organic molecules to study their electrolytic behavior. A series of organic molecules, such as heptanethiol, dodecanethiol and octadecanethiol are bonded to electrode surfaces. Electrolytic capacitors were formed on both unmodified and chemically modified electrodes using KCl and H2SO4 as electrolytes. This molecular modification significantly enhances the current levels in cyclic voltammograms, and there is a clear shift in oxidation reduction peaks of these capacitors with scan rate. The results obey Randles-Sevcik relation, which indicates that there is enhancement of ionic diffusion at the electrode-electrolyte interface. There is a large enhancement in the values of specific capacitance (almost by 104 times) after the chemical modification. These measurements show that Faradaic reactions are responsible for charge storage discharge process in these capacitors. Hence, the molecularly modified electrodes can be a good choice to increase the specific capacitance.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/1/4/045508