Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition‐metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor‐phase growth. It enables the creation...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-07, Vol.27 (25), p.3803-3810
Main Authors: Heo, Hoseok, Sung, Ji Ho, Jin, Gangtae, Ahn, Ji-Hoon, Kim, Kyungwook, Lee, Myoung-Jae, Cha, Soonyoung, Choi, Hyunyong, Jo, Moon-Ho
Format: Article
Language:English
Subjects:
2D materials
Control equipment
heterostructures
hexagonal transition-metal dichalcogenides
Interlayers
Molybdenum disulfide
monolayer semiconductors
Monolayers
Nucleation
Stacking
Stitching
superlattices
Two dimensional
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Summary:2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition‐metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor‐phase growth. It enables the creation of hexagon‐on‐hexagon unit‐cell stacking and hexagon‐by‐hexagon stitching without interlayer rotation misfits.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201500846