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Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition‐metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor‐phase growth. It enables the creation...

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Published in:Advanced materials (Weinheim) 2015-07, Vol.27 (25), p.3803-3810
Main Authors: Heo, Hoseok, Sung, Ji Ho, Jin, Gangtae, Ahn, Ji-Hoon, Kim, Kyungwook, Lee, Myoung-Jae, Cha, Soonyoung, Choi, Hyunyong, Jo, Moon-Ho
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cited_by cdi_FETCH-LOGICAL-c6226-5e661e5f84dc022e6f0381e12f9c669ea7bbfb024bb70dec83453e1cbd46ff4d3
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container_end_page 3810
container_issue 25
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container_title Advanced materials (Weinheim)
container_volume 27
creator Heo, Hoseok
Sung, Ji Ho
Jin, Gangtae
Ahn, Ji-Hoon
Kim, Kyungwook
Lee, Myoung-Jae
Cha, Soonyoung
Choi, Hyunyong
Jo, Moon-Ho
description 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition‐metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor‐phase growth. It enables the creation of hexagon‐on‐hexagon unit‐cell stacking and hexagon‐by‐hexagon stitching without interlayer rotation misfits.
doi_str_mv 10.1002/adma.201500846
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subjects 2D materials
Control equipment
heterostructures
hexagonal transition-metal dichalcogenides
Interlayers
Molybdenum disulfide
monolayer semiconductors
Monolayers
Nucleation
Stacking
Stitching
superlattices
Two dimensional
title Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
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