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Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition‐metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor‐phase growth. It enables the creation...
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Published in: | Advanced materials (Weinheim) 2015-07, Vol.27 (25), p.3803-3810 |
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container_end_page | 3810 |
container_issue | 25 |
container_start_page | 3803 |
container_title | Advanced materials (Weinheim) |
container_volume | 27 |
creator | Heo, Hoseok Sung, Ji Ho Jin, Gangtae Ahn, Ji-Hoon Kim, Kyungwook Lee, Myoung-Jae Cha, Soonyoung Choi, Hyunyong Jo, Moon-Ho |
description | 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition‐metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor‐phase growth. It enables the creation of hexagon‐on‐hexagon unit‐cell stacking and hexagon‐by‐hexagon stitching without interlayer rotation misfits. |
doi_str_mv | 10.1002/adma.201500846 |
format | article |
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subjects | 2D materials Control equipment heterostructures hexagonal transition-metal dichalcogenides Interlayers Molybdenum disulfide monolayer semiconductors Monolayers Nucleation Stacking Stitching superlattices Two dimensional |
title | Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls |
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