Surface phonon scattering in epitaxial graphene on 6H-SiC

We show the growth of high-quality epitaxial graphene on 6H-SiC with Raman signatures comparable to exfoliated flakes. We ascribe the remaining low-quality transport properties to the strong electron-phonon coupling to two low-energy phonon modes at 70 and 16 meV. The coupling of these modes is enha...

Full description

Saved in:
Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-05, Vol.87 (19)
Main Authors: Giesbers, A J M, Prochazka, P, Flipse, C F J
Format: Article
Language:English
Subjects:
Condensed matter
Epitaxial growth
Flakes (defects)
Graphene
Joining
Phonons
Scattering
Silicon carbide
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We show the growth of high-quality epitaxial graphene on 6H-SiC with Raman signatures comparable to exfoliated flakes. We ascribe the remaining low-quality transport properties to the strong electron-phonon coupling to two low-energy phonon modes at 70 and 16 meV. The coupling of these modes is enhanced by the defects present in the SiC substrate and buffer layer. Measurements of the mobility versus carrier concentration show a square-root dependence, corroborating the importance of surface phonon scattering in the limited mobility of graphene on SiC.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.87.195405