Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

We report that V sub(O) cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based resistive random-access memories (ReRAMs). We propose universal guiding principles by which ReRAM with unipolar and bipolar operations can b...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-04, Vol.87 (15), Article 155201
Main Authors: Kamiya, Katsumasa, Yang, Moon Young, Nagata, Takahiro, Park, Seong-Geon, Magyari-Köpe, Blanka, Chikyow, Toyohiro, Yamada, Keisaku, Niwa, Masaaki, Nishi, Yoshio, Shiraishi, Kenji
Format: Article
Language:English
Subjects:
Carrier injection
Cohesion
Condensed matter
Electrodes
Mathematical analysis
Origins
Switching
Work functions
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Summary:We report that V sub(O) cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based resistive random-access memories (ReRAMs). We propose universal guiding principles by which ReRAM with unipolar and bipolar operations can be designed by controlling electrode work functions. We found by first-principles calculations that structural phase transition with V sub(O) cohesion-isolation is the physical origin of the resistance switching mechanism of binary-oxide-based ReRAM. Based on our theory, we can propose a guiding principle toward bipolar switching ReRAM with stable high work function metal electrodes.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.87.155201