Criticality of the metal–topological insulator transition driven by disorder

Employing scaling analysis of the localization length, we deduce the critical exponent of the metal-h topological insulator transitions induced by disorder. The obtained exponent [nu] ~ 2.7 shows no conspicuous deviation from the value established for metal-hordinary insulator transitions in systems...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-05, Vol.87 (20), Article 205141
Main Authors: Yamakage, Ai, Nomura, Kentaro, Imura, Ken-Ichiro, Kuramoto, Yoshio
Format: Article
Language:English
Subjects:
Condensed matter
Deviation
Disorders
Exponents
Insulators
Phase diagrams
Symmetry
Topology
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Summary:Employing scaling analysis of the localization length, we deduce the critical exponent of the metal-h topological insulator transitions induced by disorder. The obtained exponent [nu] ~ 2.7 shows no conspicuous deviation from the value established for metal-hordinary insulator transitions in systems of the symplectic class. We investigate the topological phase diagram upon carrier doping to reveal the nature of the so-called topological Anderson insulator (TAI) region. The critical exponent of the metal-TAI transition is also first estimated, shown to be undistinguishable from the above value within the numerical error. By symmetry considerations we determine the explicit form of Rashba spin-orbit coupling in systems of C sub(4[upsilon]) point group symmetry.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.87.205141