Defect states and excitations in a Mott insulator with orbital degrees of freedom: Mott-Hubbard gap versus optical and transport gaps in doped systems

We address the role played by charged defects in doped Mott insulators with active orbital degrees of freedom. It is observed that defects feature a rather complex and rich physics, which is well captured by a degenerate Hubbard model extended by terms that describe crystal-field splittings and orbi...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-01, Vol.87 (4), Article 045132
Main Authors: Avella, Adolfo, Horsch, Peter, Oleś, Andrzej M.
Format: Article
Language:English
Subjects:
Condensed matter
Crystal defects
Degrees of freedom
Density
Insulators
Mathematical analysis
Orbitals
Transport
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Summary:We address the role played by charged defects in doped Mott insulators with active orbital degrees of freedom. It is observed that defects feature a rather complex and rich physics, which is well captured by a degenerate Hubbard model extended by terms that describe crystal-field splittings and orbital-lattice coupling, as well as by terms generated by defects such as the Coulomb potential terms that act both on doped holes and on electrons within occupied orbitals at undoped sites. This study elucidates the mechanism behind the Coulomb gap appearing in the band of defect states and investigates the dependence on the electron-electron interactions and the screening by the orbital-polarization field. We analyze the orbital densities at vanadium ions in the vicinity of defects and the excited defect states which determine the optical and transport gaps in doped systems.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.87.045132