Influence of a Ni buffer layer on the optical and electrical properties of GZO/Ni bi-layered films

Ga-doped ZnO (GZO) and GZO/Ni bi-layered films were prepared on polycarbonate (PC) substrates by DC and RF magnetron sputtering at room temperature in order to determine the influence of a Ni buffer layer on the structural, optical, and electrical properties of the GZO/Ni films. The thickness of the...

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Bibliographic Details
Published in:Journal of alloys and compounds 2015-08, Vol.639, p.1-4
Main Authors: Jeon, Jae-Hyun, Gong, Tae-Kyung, Kim, Sun-Kyung, Kim, Seung-Hong, Kim, So-Young, Choi, Dong-Hyuk, Son, Dong-Il, Kim, Daeil
Format: Article
Language:English
Subjects:
Buffer layers
Electrical properties
Electrical resistivity
Grain size
Nickel
Optical properties
Optimization
Polycarbonates
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Summary:Ga-doped ZnO (GZO) and GZO/Ni bi-layered films were prepared on polycarbonate (PC) substrates by DC and RF magnetron sputtering at room temperature in order to determine the influence of a Ni buffer layer on the structural, optical, and electrical properties of the GZO/Ni films. The thickness of the Ni buffer layer was varied between 2 and 5 nm. As-deposited GZO films that contained the PC substrate show an average optical transmittance of 81.3% in the visible wavelength region and an electrical resistivity of 3.1 x 10 super(-3) [Omega] cm, while GZO/Ni bi-layered films show different optical and electrical properties that are dependent on the thickness of the Ni buffer layer. Although the GZO 100 nm/Ni 5 nm films possessed the lowest electrical resistivity (7.3 x 10 super(-4) [Omega] cm) and the largest grain size (16 nm) in this study, GZO 100 nm/Ni 2 nm films showed best optoelectrical performance among the films. This superiority was due to the simultaneous optimization of the optical and electrical properties.
ISSN:0925-8388
DOI:10.1016/j.jallcom.2015.02.123