Atomic surface structure of graphene and its buffer layer on SiC(0001): A chemical-specific photoelectron diffraction approach

We report a chemically specific x-ray photoelectron diffraction (XPD) investigation using synchrotron radiation of the thermally induced growth of epitaxial graphene on the 6H-SiC(0001). The XPD results show that the buffer layer on the SiC(0001) surface is formed by two domain regions rotated by 60...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-02, Vol.87 (8), Article 081403
Main Authors: de Lima, L. H., de Siervo, A., Landers, R., Viana, G. A., Goncalves, A. M. B., Lacerda, R. G., Häberle, P.
Format: Article
Language:English
Subjects:
Buffer layers
Condensed matter
Diffraction
Displacement
Graphene
Photoelectrons
Reconstruction
Ripples
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Summary:We report a chemically specific x-ray photoelectron diffraction (XPD) investigation using synchrotron radiation of the thermally induced growth of epitaxial graphene on the 6H-SiC(0001). The XPD results show that the buffer layer on the SiC(0001) surface is formed by two domain regions rotated by 60[degrees] with respect to each other. The experimental data supported by a comprehensive multiple scattering calculation approach indicates the existence of a long-range ripple due the (6[radical]3 x 6[radical]3) R30[degrees] reconstruction, in addition to a local range buckling in the (0001) direction of the two sublattices that form the honeycomb structure of the buffer layer. This displacement supports the existence of an sp super(2)-to-sp super(3) rehybridization in this layer. For the subsequent graphene layer this displacement is absent, which can explain several differences between the electronic structures of graphene and the buffer layer.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.87.081403