High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics

The combination of high‐quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A r...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-09, Vol.27 (35), p.5230-5234
Main Authors: Cui, Yang, Xin, Run, Yu, Zhihao, Pan, Yiming, Ong, Zhun-Yong, Wei, Xiaoxu, Wang, Junzhuan, Nan, Haiyan, Ni, Zhenhua, Wu, Yun, Chen, Tangsheng, Shi, Yi, Wang, Baigeng, Zhang, Gang, Zhang, Yong-Wei, Wang, Xinran
Format: Article
Language:English
Subjects:
interfaces
mobility
transition metal dichalcogenides
tungsten disulfide (WS2)
Online Access:Get full text
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Summary:The combination of high‐quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2 V−1 s−1 (337 cm2 V−1 s−1) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201502222