Detection of the insulating gap and conductive filament growth direction in resistive memories

Filament growth is a key aspect in the operation of bipolar resistive random access memory (RRAM) devices, yet there are conflicting reports in the literature on the direction of growth of conductive filaments in valence change RRAM devices. We report here that an insulating gap between the filament...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale 2015-10, Vol.7 (37), p.15434-15441
Main Authors: Yalon, E, Karpov, I, Karpov, V, Riess, I, Kalaev, D, Ritter, D
Format: Article
Language:English
Subjects:
Computer Storage Devices
Electric Conductivity
Electric potential
Electrodes
Equipment Design
Filaments
Memory devices
Models, Theoretical
Nanotechnology
Polarity
Random access memory
Semiconductors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Filament growth is a key aspect in the operation of bipolar resistive random access memory (RRAM) devices, yet there are conflicting reports in the literature on the direction of growth of conductive filaments in valence change RRAM devices. We report here that an insulating gap between the filament and the semiconductor electrode can be detected by the metal-insulator-semiconductor bipolar transistor structure, and thus provide information on the filament growth direction. Using this technique, we show how voltage polarity and electrode chemistry control the filament growth direction during electro-forming. The experimental results and the nature of a gap between the filament and an electrode are discussed in light of possible models of filament formation. The insulating gap and conductive filament growth direction in valence change RRAM devices were studied using the metal-insulator-semiconductor bipolar transistor structure.
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr03314d