Compositional disorder anomalies in Ga(N,P,As)/GaP quantum well structures

Photoluminescence (PL) in many-component semiconductor heterostructures is strongly affected by disorder potential caused by compositional fluctuations. Our experimental study of the temperature-dependent PL in Ga(N,P,As)/GaP QW indicates the intriguing feature that the scale of disorder potential d...

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Bibliographic Details
Published in:Journal of physics. Conference series 2012-01, Vol.376 (1), p.12021-6
Main Authors: Jandieri, K, Baranovskii, S D, Kunert, B, Zimprich, M, Liebich, S, Volz, K, Stolz, W, Chatterjee, S, Karcher, C, Heimbrodt, W, Gebhard, F
Format: Article
Language:English
Subjects:
Anomalies
Band structure of solids
Composition effects
Disorders
Fluctuation
Heterostructures
Mathematical analysis
Mixed crystals
Nitrogen
Photoluminescence
Physics
Quantum wells
Semiconductors
Temperature dependence
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Summary:Photoluminescence (PL) in many-component semiconductor heterostructures is strongly affected by disorder potential caused by compositional fluctuations. Our experimental study of the temperature-dependent PL in Ga(N,P,As)/GaP QW indicates the intriguing feature that the scale of disorder potential decreases with increasing concentration of the fluctuating compositional component (nitrogen). We claim that this effect strongly indicates that the dependence of the band structure on the concentration of the fluctuating compositional component weakens and the effective mass decreases with increasing concentration (in 2%÷4% domain). This conclusion is supported by theoretical estimates within the analytical theory of compositional fluctuations in mixed crystals.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/376/1/012021