Spectral Monitoring CH/C2 Ratio of Methane Plasma for Growing Single-Layer Graphene on Cu

Single-layer graphene was grown on copper at a low temperature of 600°C by plasma-assisted thermal chemical vapor deposition. Its growth mechanism was discussed with reference to the emission spectra of the plasma. The methane plasma produces the active species (Hx, CHx, and Cx) without the addition...

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Bibliographic Details
Published in:Journal of nanomaterials 2015, Vol.2015 (2015), p.1-5
Main Authors: Kuo, Chien-Cheng, Chen, Sheng-Hui, Wei, Hung-Sen, Chen, Hung-Pin, Liao, Shih-Fang, Chan, Shih-Hao, Lee, Cheng-Chung
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition
Copper
Decomposition
Defects
Deposition
Electrodes
Graphene
Graphite
Hydrocarbons
Methane
Monitoring
Nanomaterials
Physical properties
Plasma etching
Quality
Spectra
Spectrum analysis
Synthesis
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Summary:Single-layer graphene was grown on copper at a low temperature of 600°C by plasma-assisted thermal chemical vapor deposition. Its growth mechanism was discussed with reference to the emission spectra of the plasma. The methane plasma produces the active species (Hx, CHx, and Cx) without the addition of flowing hydrogen, and the amounts of hydrogen-containing species can be controlled by varying the plasma power. The effective distance was found between the plasma initial stage and the deposition stage for the single-layer graphene synthesis. The results reveal that high-quality graphene can be synthesized using methane plasma at a suitable plasma power.
ISSN:1687-4110
1687-4129
DOI:10.1155/2015/423237