Large resistivity change and phase transition in the antiferromagnetic semiconductors LiMnAs and LaOMnAs

Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here...

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Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-11, Vol.88 (18), Article 184429
Main Authors: Beleanu, A., Kiss, J., Kreiner, G., Köhler, C., Müchler, L., Schnelle, W., Burkhardt, U., Chadov, S., Medvediev, S., Ebke, D., Felser, C., Cordier, G., Albert, B., Hoser, A., Bernardi, F., Larkin, T. I., Pröpper, D., Boris, A. V., Keimer, B.
Format: Article
Language:English
Subjects:
Antiferromagnetism
Condensed matter
Density functional theory
Electrical resistivity
Mathematical analysis
Phase transformations
Semiconductors
Spin valves
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Summary:Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs, and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. Neutron and x-ray diffraction measurements on LiMnAs show a magnetic phase transition corresponding to the Neel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory calculations.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.88.184429