Development of a silicon oxide-based resistive memory device using a spin-on hydrogen silsesquioxane precursor

Resistive memory devices have the potential to replace flash technology due to their increased scalability, low voltage of operation, and compatibility with silicon semiconductor manufacturing. We report a spin-on resistive switching material, hydrogen silsesquioxane (HSQ), which is a commonly used...

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Bibliographic Details
Published in:Journal of materials research 2012-12, Vol.27 (24), p.3110-3116
Main Authors: Rice, Zachary P., Briggs, Benjamin D., Bishop, Seann M., Cady, Nathaniel C.
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Biomaterials
Chemical vapor deposition
Copper
Data storage
Devices
Electric potential
Electrodes
Electrons
Inorganic Chemistry
Materials Engineering
Materials research
Materials Science
Memory devices
Metal oxides
Nanotechnology
Plating
Random access memory
Semiconductors
Sensors
Silicon wafers
Switching
Voltage
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Summary:Resistive memory devices have the potential to replace flash technology due to their increased scalability, low voltage of operation, and compatibility with silicon semiconductor manufacturing. We report a spin-on resistive switching material, hydrogen silsesquioxane (HSQ), which is a commonly used electron beam resist. We demonstrate device scalability from 100 μm to 48 nm and show that the switching properties do not depend on the device size. Set voltages were typically
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2012.390