Electrical transport in epitaxial and polycrystalline thin LSMO films

We report studies on the electrical transport in La0.7Sr0.3MnO3 (LSMO) thin films of different quality. The temperature dependence of the resistivity (ρ-T) of high-quality LSMO films (ρ ≲ 10 mΩ cm) can be described by a polynomial approximation based on electron-magnon, electron-phonon, electron-ele...

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Published in:Journal of physics. Conference series 2014-01, Vol.514 (1), p.12042-5
Main Authors: Štrbík, V, Blagoev, B, Mateev, E, Nurgaliev, T
Format: Article
Language:English
Subjects:
Approximation
Electric contacts
Electrons
Ferromagnetism
Grain boundaries
Grains
Magnons
Mathematical models
Physics
Polycrystals
Polynomials
Semiconductors
Temperature dependence
Thin films
Transport
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cited_by cdi_FETCH-LOGICAL-c364t-a8b54cb292e6f5868869199fb025c5ad8d38d3a8980d38985ace925ee35934c13
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description We report studies on the electrical transport in La0.7Sr0.3MnO3 (LSMO) thin films of different quality. The temperature dependence of the resistivity (ρ-T) of high-quality LSMO films (ρ ≲ 10 mΩ cm) can be described by a polynomial approximation based on electron-magnon, electron-phonon, electron-electron and temperature-independent scatterings. On the other hand, the ρ-T dependence of polycrystalline LSMO films prepared under less than optimal conditions (ρ ≳ 1 Ω cm) can be described by a two-conductance-channel model. The first one is a spin-polarized tunneling between neighboring ferromagnetic grains with good contacts, while the other is implemented via a thermally-activated transport through an insulator (semiconductor) phase located mainly at the grain boundaries or between grains.
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source Publicly Available Content (ProQuest); Free Full-Text Journals in Chemistry
subjects Approximation
Electric contacts
Electrons
Ferromagnetism
Grain boundaries
Grains
Magnons
Mathematical models
Physics
Polycrystals
Polynomials
Semiconductors
Temperature dependence
Thin films
Transport
title Electrical transport in epitaxial and polycrystalline thin LSMO films
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