Conducting channel at the LaAlO sub(3)/SrTiO sub(3) interface

Localization of electrons in the two-dimensional electron gas at the LaAlO sub(3)/SrTiO sub(3) interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO sub(3) were grown on NdGaO sub(3) (110) substrates and capped with LaA...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-10, Vol.88 (16)
Main Authors: Huang, Z, Wang, X Renshaw, Liu, Z Q, Lu, W M, Zeng, S W, Annadi, A, Tan, W L, Qiu, X P, Zhao, Y L, Salluzzo, M, Coey, J M D, Venkatesan, T
Format: Article
Language:English
Subjects:
Capping
Channels
Charge transfer
Condensed matter
Conduction
Localization
Strontium titanates
Unit cell
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Summary:Localization of electrons in the two-dimensional electron gas at the LaAlO sub(3)/SrTiO sub(3) interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO sub(3) were grown on NdGaO sub(3) (110) substrates and capped with LaAlO sub(3). When the SrTiO sub(3) thickness is [< or =, ]6 unit cells, most electrons at the interface are localized, but when the number of SrTiO sub(3) layers is 8-16, the free carrier density approaches 3.3x10 super(14) cm super(-2), the value corresponding to charge transfer of 0.5 electrons per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO sub(3) thickness is > or =20 unit cells. The ~4 nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.
ISSN:1098-0121
1550-235X