Fabrication of high-quality graphene by hot-filament thermal chemical vapor deposition

To the best of our knowledge, the previously reported graphene fabricated using catalytic chemical vapor deposition techniques contained a high defect density, which will hinder its opto-electronic properties. In this work, the effects of two crucial parameters, namely deposition time and hydrogen f...

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Bibliographic Details
Published in:Carbon (New York) 2015-05, Vol.86, p.1-11
Main Authors: Syed Muhammad Hafiz, Chong, Su Kong, Huang, Nay Ming, Abdul Rahman, Saadah
Format: Article
Language:English
Subjects:
Carbon
CHEMICAL VAPOR DEPOSITION
Copper
COPPER OXIDE
Defects
Density
DEPOSITION
FABRICATION
FOIL
Foils
Graphene
MICA
VAPOR DEPOSITION
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Summary:To the best of our knowledge, the previously reported graphene fabricated using catalytic chemical vapor deposition techniques contained a high defect density, which will hinder its opto-electronic properties. In this work, the effects of two crucial parameters, namely deposition time and hydrogen flow rate on the growth of graphene using a hot-filament thermal chemical vapor deposition technique were systematically studied. Fabrications were conducted at substrate and filament temperatures of 1000°C and 1750°C, respectively. Very low ID/IG ratios (≪0.1) were obtained for all the samples, which reflected the formation of high-quality graphene deposited on Cu foils. A quasi-static equilibrium copper vapor inside an alumina tube was found to be an important factor to obtain a low defect density graphene. A growth mechanism was then proposed, where the cuprous oxide (Cu2O) acted as a nucleation site for graphene growth.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2015.01.018