Differences between thin films deposition systems in the production transition metal nitride

The progress in vacuum technology have enabled the development of advanced coatings processes such as plasma assisted systems, which can produce thin films of different composition and optimum properties, that cannot be collected for the same material. The techniques of Pulsed Arc, Ionic Implantatio...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2013-01, Vol.466 (1), p.12002-4
Main Authors: Quintero, J H, Mariño, A, Arango, P J
Format: Article
Language:English
Subjects:
Arc deposition
Binding energy
Coatings
Gold
Ion implantation
Metal nitrides
Nitrides
Physical vapor deposition
Physics
Spectra
Sputtering
Thin films
Transition metals
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The progress in vacuum technology have enabled the development of advanced coatings processes such as plasma assisted systems, which can produce thin films of different composition and optimum properties, that cannot be collected for the same material. The techniques of Pulsed Arc, Ionic Implantation and Sputtering have differences to produce coatings. Currently, AuN films have been grown by different techniques such as ion implantation, Reactive Ion Sputtering and Pulsed Arc, which have differences in the grown of the film. Siller 2002 reported a binding energy of 396.6 eV to N1s narrow spectrum as the first direct observation of a gold nitride. In this work, AuN thin films were grown in a system Plasma-Assisted Physical Vapor Deposition by pulsed arc technique. A N1s spectra was obtained with binding energies of 398.1, which by means of the differences between the techniques of ion implantation, sputtering and pulsed arc is concluded have been assigned to gold nitride species.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/466/1/012002