P-2: A Novel Method for LTPS Model Extraction with Hysteresis and Transient Current Analysis

Time‐sampling measurements are used in this paper to build time dependent LTPS TFT current model. The device model that considers bias and time dependent threshold voltage (Vth) shift and mobility degradation is implemented in Eldo through GUDM for simulating a pixel circuit as an indicator of panel...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2015-06, Vol.46 (1), p.1123-1126
Main Authors: Kuo, Chen-Hao, Tsai, Yung-Sheng, Tseng, Ching-Chieh, Lau, Chee-Wai, Liu, Chun-Yen, Wang, Hannibal, Huang, Leon, Lin, Scott, Wei, You-Pang, Liu, Po-Tsun
Format: Article
Language:English
Subjects:
Circuits
Computer simulation
Construction
Devices
Eldo
GUDM
GUDM
transient current
Hysteresis
LTPS
LTPS, Vth shift
mobility degradation
Pixels
Thin film transistors
time-sampling measurement
Transient current
Vth shift
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Description
Summary:Time‐sampling measurements are used in this paper to build time dependent LTPS TFT current model. The device model that considers bias and time dependent threshold voltage (Vth) shift and mobility degradation is implemented in Eldo through GUDM for simulating a pixel circuit as an indicator of panel performance.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10022