Electric field dependence of charge-carrier hopping transport at large carrier concentrations in disordered organic solids: Meyer-Neldel and Gill energies

Effective medium approach has been extended to describe the temperature dependent hopping charge-carrier mobility at arbitrary electric fields in the large carrier density transport regime. We take into account the spatial energy correlations in organic materials with Gaussian disorder. The theory i...

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Bibliographic Details
Published in:Journal of physics. Conference series 2012-01, Vol.376 (1), p.12011-6
Main Authors: Fishchuk, I I, Kadashchuk, A, Ullah, Mujeeb, Sitter, H, Sariciftci, N S, Bässler, H
Format: Article
Language:English
Subjects:
Carrier density
Carrier mobility
Correlation
Current carriers
Density of states
Electric charge
Electric fields
Electric potential
Electron transport
Gaussian
Mathematical models
Normal distribution
Organic materials
Organic solids
Physics
Temperature dependence
Transport
Transport properties
Voltage
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Summary:Effective medium approach has been extended to describe the temperature dependent hopping charge-carrier mobility at arbitrary electric fields in the large carrier density transport regime. We take into account the spatial energy correlations in organic materials with Gaussian disorder. The theory is applied to describe recent experimental measurements of the electron transport properties in a C60-based OFET for different lateral electric fields FDS. Since this model is not limited to zero-field mobility, it allows a more accurate evaluation of important material parameters from experimental data measured at a given electric field. The shift of the Meyer-Neldel energy EMN upon applied lateral electric field FDS and the Gill energy EG upon the gate voltage VG in an OFET is shown to be a consequence of the spatial energy correlation effects in the organic semiconductor film. We showed that both the Meyer-Neldel and Gill energies can be used for estimating the width of the Gaussian density-of-states distribution.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/376/1/012011