P-29: A Polymer/Fullerene-based Material in Near-Infrared Photodetector Application

A novel semiconducting polymer, PDPP3T, with alternating diketopyrrolopyrrole and terthiophene units is presented in this study. Due to PDPP3T has a small band gap of 1.3 eV, and high hole mobility of 0.04 cm(2) V(‐1) s(‐1), it can be used for organic photo sensor to absorb the near infrared (NIR) p...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2015-06, Vol.46 (1), p.1240-1242
Main Authors: Hsiao, Hsia-Tsai, Liang, Yu-Hsin, Peng, Hsiang-I, Tu, Chun-Hao, Liu, Chu-Yu, Chiang, Ming-Feng
Format: Article
Language:English
Subjects:
Band spectra
Deposition
Devices
Esters
Infrared
Photocurrent
Sensors
Technical papers
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Summary:A novel semiconducting polymer, PDPP3T, with alternating diketopyrrolopyrrole and terthiophene units is presented in this study. Due to PDPP3T has a small band gap of 1.3 eV, and high hole mobility of 0.04 cm(2) V(‐1) s(‐1), it can be used for organic photo sensor to absorb the near infrared (NIR) parts of the spectrum. The photo sensor are fabricated from Poly (diketopyrrolopyrrole‐terthiophene) (PDPP3T) and [6,6]‐phenyl C61‐butylric acid methyl ester (PCBM) using a solution‐based, temperature assisted deposition protocol. Devices made by this protocol lead to photo and dark current of around 4.6µA/cm2 and 2.1nA/cm2 at ‐1V. The device yields a good linear response of photocurrent to the near infrared exposure (from 50‐400µW/cm2) for a range of operating biases
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10076