UV LEDs for high-current operation

In this paper we report on results of development of ultraviolet light-emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by chloride-hydride vapour phase epitaxy (CHVPE). Both UV LED heterostructures and packaged dies are investigated. UV LEDs proved perf...

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Bibliographic Details
Published in:Journal of physics. Conference series 2013-01, Vol.461 (1), p.12028-6, Article 012028
Main Authors: Kurin, S Yu, Antipov, A A, Roenkov, A D, Barash, I S, Helava, H I, Menkovich, E A, Tarasov, S A, Lamkin, I A, Shmidt, N M, Makarov, Yu N
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum oxide
Chlorides
Current density
Epitaxial growth
Epitaxy
Gallium nitrides
Heterostructures
Light emitting diodes
Physics
Substrates
Ultraviolet radiation
Vapor phase epitaxy
Vapor phases
Vapour
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Summary:In this paper we report on results of development of ultraviolet light-emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by chloride-hydride vapour phase epitaxy (CHVPE). Both UV LED heterostructures and packaged dies are investigated. UV LEDs proved performance capability at current density up to 125 A/cm2 and revealed wall-plug efficiency (WPE) of 1.5% at operating current of 20 mA.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/461/1/012028