P-155L: Late-News Poster: Low Temperature Activation of In-Ga-Zn-O Thin Film Transistor using High Pressure Annealing

We investigated the effects of high‐pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a‐IGZO) channel layer at 100°C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2015-06, Vol.46 (1), p.1231-1233
Main Authors: Kim, Won-Gi, Tak, Young Jun, Jung, Tae Soo, Park, Sung Pyo, Lee, Heesoo, Park, Jeong Woo, Kim, Hyun Jae
Format: Article
Language:English
Subjects:
Activation
amorphous indium gallium zinc oxide
Annealing
Channels
High pressure annealing
Indium
Low temperature activation
Oxygen
Stability
Technical papers
Thin film transistors
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Summary:We investigated the effects of high‐pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a‐IGZO) channel layer at 100°C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10070