Ultrafast spin-polarized lasing in a highly photoexcited semiconductor microcavity at room temperature

We demonstrate room-temperature spin-polarized ultrafast (~ 10 ps) lasing in a highly optically excited GaAs microcavity. This microcavity is embedded with InGaAs multiple quantum wells in which the spin relaxation time is less than 10 ps. The laser radiation remains highly circularly polarized even...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-05, Vol.91 (19), Article 195312
Main Authors: Hsu, Feng-kuo, Xie, Wei, Lee, Yi-Shan, Lin, Sheng-Di, Lai, Chih-Wei
Format: Article
Language:English
Subjects:
Condensed matter
Density
Excitation
Holes
Lasers
Lasing
Microcavities
Semiconductors
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Summary:We demonstrate room-temperature spin-polarized ultrafast (~ 10 ps) lasing in a highly optically excited GaAs microcavity. This microcavity is embedded with InGaAs multiple quantum wells in which the spin relaxation time is less than 10 ps. The laser radiation remains highly circularly polarized even when excited by nonresonant elliptically polarized light. The lasing energy is not locked to the bare cavity resonance, and shifts ~ 10 meV as a function of the photoexcited density. Such spin-polarized lasing is attributed to a spin-dependent stimulated process of correlated electron-hole pairs. These pairs are formed near the Fermi edge in a high-density electron-hole plasma coupled to the cavity light field.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.91.195312