Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output...

Full description

Saved in:
Bibliographic Details
Published in:Optics express 2015-10, Vol.23 (21), p.27145-27151
Main Authors: Hsieh, D H, Tzou, A J, Kao, T S, Lai, F I, Lin, D W, Lin, B C, Lu, T C, Lai, W C, Chen, C H, Kuo, H C
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c395t-a6b23f1721abdfd73645fd8b779a6c69f451d79461cd6a707b3c0cdd1aa2d9a93
cites cdi_FETCH-LOGICAL-c395t-a6b23f1721abdfd73645fd8b779a6c69f451d79461cd6a707b3c0cdd1aa2d9a93
container_end_page 27151
container_issue 21
container_start_page 27145
container_title Optics express
container_volume 23
creator Hsieh, D H
Tzou, A J
Kao, T S
Lai, F I
Lin, D W
Lin, B C
Lu, T C
Lai, W C
Chen, C H
Kuo, H C
description In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.
doi_str_mv 10.1364/oe.23.027145
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1725024969</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1725024969</sourcerecordid><originalsourceid>FETCH-LOGICAL-c395t-a6b23f1721abdfd73645fd8b779a6c69f451d79461cd6a707b3c0cdd1aa2d9a93</originalsourceid><addsrcrecordid>eNpNkEtLAzEUhYMoWqs715KlC6fNaybNspRaC8UufGyHvEZSMzM1mSn035vSKi4u93Dv4YNzALjDaIRpwcatHRE6QoRjlp-BAUaCZQxN-Pk_fQWuY9wghBkX_BJckYJNEOX5APhlvQ3tzhqoZQjOBuiajdWda5uk4EK-ZErG9P6Yvc5XcOcknPp0HaeBde87t_UWfvey6foaqhPD-oQICaF8q79c8wm93NtwAy4q6aO9Pe0heH-av82es9V6sZxNV5mmIu8yWShCK8wJlspUhqeUeWUminMhC12IiuXYcMEKrE0hOeKKaqSNwVISI6SgQ_Bw5KZo372NXVm7qK33srFtH8uEzhFhojhYH49WHdoYg63KbXC1DPsSo_LQb7mel4SWx36T_f5E7lVtzZ_5t1D6A4Nzdh0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1725024969</pqid></control><display><type>article</type><title>Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer</title><source>EZB Electronic Journals Library</source><creator>Hsieh, D H ; Tzou, A J ; Kao, T S ; Lai, F I ; Lin, D W ; Lin, B C ; Lu, T C ; Lai, W C ; Chen, C H ; Kuo, H C</creator><creatorcontrib>Hsieh, D H ; Tzou, A J ; Kao, T S ; Lai, F I ; Lin, D W ; Lin, B C ; Lu, T C ; Lai, W C ; Chen, C H ; Kuo, H C</creatorcontrib><description>In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/oe.23.027145</identifier><identifier>PMID: 26480375</identifier><language>eng</language><publisher>United States</publisher><ispartof>Optics express, 2015-10, Vol.23 (21), p.27145-27151</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c395t-a6b23f1721abdfd73645fd8b779a6c69f451d79461cd6a707b3c0cdd1aa2d9a93</citedby><cites>FETCH-LOGICAL-c395t-a6b23f1721abdfd73645fd8b779a6c69f451d79461cd6a707b3c0cdd1aa2d9a93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/26480375$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Hsieh, D H</creatorcontrib><creatorcontrib>Tzou, A J</creatorcontrib><creatorcontrib>Kao, T S</creatorcontrib><creatorcontrib>Lai, F I</creatorcontrib><creatorcontrib>Lin, D W</creatorcontrib><creatorcontrib>Lin, B C</creatorcontrib><creatorcontrib>Lu, T C</creatorcontrib><creatorcontrib>Lai, W C</creatorcontrib><creatorcontrib>Chen, C H</creatorcontrib><creatorcontrib>Kuo, H C</creatorcontrib><title>Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.</description><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNkEtLAzEUhYMoWqs715KlC6fNaybNspRaC8UufGyHvEZSMzM1mSn035vSKi4u93Dv4YNzALjDaIRpwcatHRE6QoRjlp-BAUaCZQxN-Pk_fQWuY9wghBkX_BJckYJNEOX5APhlvQ3tzhqoZQjOBuiajdWda5uk4EK-ZErG9P6Yvc5XcOcknPp0HaeBde87t_UWfvey6foaqhPD-oQICaF8q79c8wm93NtwAy4q6aO9Pe0heH-av82es9V6sZxNV5mmIu8yWShCK8wJlspUhqeUeWUminMhC12IiuXYcMEKrE0hOeKKaqSNwVISI6SgQ_Bw5KZo372NXVm7qK33srFtH8uEzhFhojhYH49WHdoYg63KbXC1DPsSo_LQb7mel4SWx36T_f5E7lVtzZ_5t1D6A4Nzdh0</recordid><startdate>20151019</startdate><enddate>20151019</enddate><creator>Hsieh, D H</creator><creator>Tzou, A J</creator><creator>Kao, T S</creator><creator>Lai, F I</creator><creator>Lin, D W</creator><creator>Lin, B C</creator><creator>Lu, T C</creator><creator>Lai, W C</creator><creator>Chen, C H</creator><creator>Kuo, H C</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20151019</creationdate><title>Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer</title><author>Hsieh, D H ; Tzou, A J ; Kao, T S ; Lai, F I ; Lin, D W ; Lin, B C ; Lu, T C ; Lai, W C ; Chen, C H ; Kuo, H C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c395t-a6b23f1721abdfd73645fd8b779a6c69f451d79461cd6a707b3c0cdd1aa2d9a93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsieh, D H</creatorcontrib><creatorcontrib>Tzou, A J</creatorcontrib><creatorcontrib>Kao, T S</creatorcontrib><creatorcontrib>Lai, F I</creatorcontrib><creatorcontrib>Lin, D W</creatorcontrib><creatorcontrib>Lin, B C</creatorcontrib><creatorcontrib>Lu, T C</creatorcontrib><creatorcontrib>Lai, W C</creatorcontrib><creatorcontrib>Chen, C H</creatorcontrib><creatorcontrib>Kuo, H C</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsieh, D H</au><au>Tzou, A J</au><au>Kao, T S</au><au>Lai, F I</au><au>Lin, D W</au><au>Lin, B C</au><au>Lu, T C</au><au>Lai, W C</au><au>Chen, C H</au><au>Kuo, H C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2015-10-19</date><risdate>2015</risdate><volume>23</volume><issue>21</issue><spage>27145</spage><epage>27151</epage><pages>27145-27151</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.</abstract><cop>United States</cop><pmid>26480375</pmid><doi>10.1364/oe.23.027145</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1094-4087
ispartof Optics express, 2015-10, Vol.23 (21), p.27145-27151
issn 1094-4087
1094-4087
language eng
recordid cdi_proquest_miscellaneous_1725024969
source EZB Electronic Journals Library
title Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T16%3A56%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improved%20carrier%20injection%20in%20GaN-based%20VCSEL%20via%20AlGaN/GaN%20multiple%20quantum%20barrier%20electron%20blocking%20layer&rft.jtitle=Optics%20express&rft.au=Hsieh,%20D%20H&rft.date=2015-10-19&rft.volume=23&rft.issue=21&rft.spage=27145&rft.epage=27151&rft.pages=27145-27151&rft.issn=1094-4087&rft.eissn=1094-4087&rft_id=info:doi/10.1364/oe.23.027145&rft_dat=%3Cproquest_cross%3E1725024969%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c395t-a6b23f1721abdfd73645fd8b779a6c69f451d79461cd6a707b3c0cdd1aa2d9a93%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1725024969&rft_id=info:pmid/26480375&rfr_iscdi=true