Study of magnetic field enhanced plasma immersion ion implantation in Silicon

A comparison between experimental measurements and numerical calculations of the ion current distribution in plasma immersion ion implantation (PIII) with external magnetic field is presented. Later, Silicon samples were implanted with nitrogen ion to analyze the effect on them. The magnetic field c...

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Bibliographic Details
Published in:Journal of physics. Conference series 2014-01, Vol.511 (1), p.12084-6
Main Authors: Pillaca, E J D M, Kostov, K G, Ueda, M
Format: Article
Language:English
Subjects:
Current distribution
Drift
Immersion
Ion current density
Ion currents
Ion implantation
Magnetic coils
Magnetic fields
Mathematical analysis
Nitrogen ions
Physics
Plasma
Plasma (physics)
Plasma density
Silicon
Submerging
Surface properties
Vacuum chambers
Wettability
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Summary:A comparison between experimental measurements and numerical calculations of the ion current distribution in plasma immersion ion implantation (PIII) with external magnetic field is presented. Later, Silicon samples were implanted with nitrogen ion to analyze the effect on them. The magnetic field considered is essentially non-uniform and is generated by two magnetic coils installed on vacuum chamber. The presence of both, electric and magnetic field in PIII create a crossed ExB field system, promoting drift velocity of the plasma around the target. The results found shows that magnetized electrons drifting in ExB field provide electron-neutral collision. The efficient ionization increases the plasma density around the target where a magnetic confinement is formed. As result, the ion current density increases, promoting significant changes in the samples surface properties, especially in the surface wettability.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/511/1/012084