Energy loss effect on color center creation in LiF crystals under irradiation with 12C, 14N, 40Ar, 84Kr, and 130Xe ions

Color center creation in LiF crystals irradiated with 12C, 14N, 40Ar, 84Kr, and 130Xe MeV ions were studied as a function of the absorbed energy (fluence). For light ions (12C, 14N) the saturation of single F centers takes place at higher absorbed energy (5×1023eV/cm3) than that for 40Ar, 84Kr and 1...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2015-09, Vol.359, p.53-56
Main Authors: Dauletbekova, A., Schwartz, K., Sorokin, M.V., Baizhumanov, M., Akilbekov, A., Zdorovets, M.
Format: Article
Language:English
Subjects:
Agglomeration
Color centers
Crystals
Defect accumulation
Energy (nuclear)
Heavy ions
Irradiation
LiF
Light ions
Saturation
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Summary:Color center creation in LiF crystals irradiated with 12C, 14N, 40Ar, 84Kr, and 130Xe MeV ions were studied as a function of the absorbed energy (fluence). For light ions (12C, 14N) the saturation of single F centers takes place at higher absorbed energy (5×1023eV/cm3) than that for 40Ar, 84Kr and 130Xe ions (∼1023eV/cm3). The saturation concentration of F centers for 12C and 14N (2×1019cm−3) is twice of that for the heavier ions. Further irradiation with light ions decreases concentration of F centers, presumably due to aggregation, whereas for heavy ions the saturation concentration remains approximately the same that can be explained by much stronger recombination losses within single tracks.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2015.07.051