Hole Doping of Tin Bromide and Lead Bromide Organic–Inorganic Hybrid Semiconductors

Isomorphous layered A2MBr4 perovskite (A = C6H5C2H4NH3+ and C6H9C2H4NH3+; M = Sn and Pb) semiconductors with energy gaps of 2.5–2.9 eV were prepared. Though the as-grown A2MBr4 perovskites displayed lower conductivities than the iodide analogs, they were found to be spontaneously doped. Furthermore,...

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Bibliographic Details
Published in:Chemistry letters 2014-10, Vol.43 (10), p.1535-1537
Main Authors: S Lorena, Giancarlo, Hasegawa, Hiroyuki, Takahashi, Yukihiro, Harada, Jun, Inabe, Tamotsu
Format: Article
Language:English
Subjects:
Bromides
Doping
Energy gap
Energy gaps (solid state)
Iodides
Perovskites
Semiconductors
Tin
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Summary:Isomorphous layered A2MBr4 perovskite (A = C6H5C2H4NH3+ and C6H9C2H4NH3+; M = Sn and Pb) semiconductors with energy gaps of 2.5–2.9 eV were prepared. Though the as-grown A2MBr4 perovskites displayed lower conductivities than the iodide analogs, they were found to be spontaneously doped. Furthermore, we demonstrated that hole doping is effective in wide-ranging A2MX4 materials that have sizable valence and conduction bands with tunable band gaps, showing potential as soluble semiconductors.
ISSN:0366-7022
1348-0715
DOI:10.1246/cl.140536