Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS

A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to form the body contact. Compared with the conventional floating body SOI LDMOS （FB SO...

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Bibliographic Details
Published in:Journal of semiconductors 2013-09, Vol.34 (9), p.53-57
Main Author: 蒋永恒 罗小蓉 李燕妃 王沛 范叶 周坤 王琦 胡夏融 张波
Format: Article
Language:English
Subjects:
CMOS兼容
Contact
Devices
Floating structures
LDMOS
Leakage current
Semiconductors
Silicon substrates
SOI器件
Thin films
Touch
导通电阻
接触结构
浮体效应
自加热效应
薄膜SOI
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Description
Summary:A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to form the body contact. Compared with the conventional floating body SOI LDMOS （FB SOI LDMOS） structure, the new structure increases the off-state BV by 54%, decreases the specific on resistance by 20%, improves the output characteristics significantly, and suppresses the self-heating effect. Furthermore, the advantages of the low leakage current and low output capacitance of SOI devices do not degrade.
ISSN:1674-4926
DOI:10.1088/1674-4926/34/9/094005