High responsivity SiGe heterojunction phototransistor on silicon photonics platform

We report on a novel near infrared SiGe phototransistor fabricated by a standard silicon photonics foundry. The device is first investigated by simulations. The fabricated devices are characterized in terms of current-voltage characteristics at different optical power. Typical phototransistors exhib...

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Published in:Optics express 2015-11, Vol.23 (22), p.28163-28169
Main Authors: Sorianello, V, De Angelis, G, De Iacovo, A, Colace, L, Faralli, S, Romagnoli, M
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Language:English
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cited_by cdi_FETCH-LOGICAL-c329t-37e5a8af3753bb17e40956da51e3c1153913a797482b6d8a9b9808b75ef363f93
cites cdi_FETCH-LOGICAL-c329t-37e5a8af3753bb17e40956da51e3c1153913a797482b6d8a9b9808b75ef363f93
container_end_page 28169
container_issue 22
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container_title Optics express
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creator Sorianello, V
De Angelis, G
De Iacovo, A
Colace, L
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Romagnoli, M
description We report on a novel near infrared SiGe phototransistor fabricated by a standard silicon photonics foundry. The device is first investigated by simulations. The fabricated devices are characterized in terms of current-voltage characteristics at different optical power. Typical phototransistors exhibit 1.55µm record responsivity at low optical power exceeding 232A/W and 42A/W at 5V and 1V bias, respectively. A differential detection scheme is also proposed for the dark current cancellation to significantly increase the device sensitivity.
doi_str_mv 10.1364/OE.23.028163
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title High responsivity SiGe heterojunction phototransistor on silicon photonics platform
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